HT Semiconductor mmbt5401 free download

File name mmbt5401.pdf

MMBT5401 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Complementary to MMBT5551 3. COLLECTOR Ideal for medium power amplification and switching - MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 A hFE1 VCE= -5V, IC= -1mA 80 DC current gain hFE2 VCE= -5V, IC=-10mA 100 300 hFE3 VCE= -5V, IC=-50mA 50 Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB= -5mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -50 mA, IB= -5mA -1 V VCE= -5V, IC= -10mA Transition frequency